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1）基本為真空密封應(yīng)用，材料為FKM,FKM-GF，F(xiàn)FKM。
2）在電子面板制成FPD的TF、ETCH、Diff工藝中的各個(gè)真空泵，管道連接KF/ISO法蘭，真空閥門（鐘擺閥，狹縫門閥 Slit valve door等）等密封應(yīng)用，滿足耐各類腐蝕性氣體，潔凈要求。
| FPD制程類別 | 工藝制程 | 溫度 | 工況條件 |
| TF | CVD | 70~200℃ | Cl2, O2, SF6, SO2, NF3, BCl3, C2HF5, H2, CHF3, Ar,Cl2, SF6, O2, C2HF, BCl3, CF4 |
| PVD | SiH4, NH3, PH3, N2, NF3, Ar, Ph3, H2, N2O | ||
| ETCH | Dry Etching | 25~150℃ | TMAH, Photo Resists |
| Wet Etching | H3PO3, HNO3, CH3COOH, NaOH | ||
| Diff | lon lmplantation | 25~200℃ | SC-1, SC-2,, Alkaline, HF，Cl2, SF6, O2, C2HF, BCl3, CF4 |
| Diffusion | Monoethanol amine (MEA) |
3）在半導(dǎo)體晶圓制成的工藝Plasma Processes、Thermal Processes、Wet Processes中，各個(gè)真空獲取設(shè)備，真空鍍膜設(shè)備，清洗設(shè)備，真空閥門，KF/ISO真空法蘭，門閥密封等應(yīng)用，即要求耐各類腐蝕氣體，耐Plasma，耐高溫及長效壽命要求，又需要密封圈件High purity，low particle,Low Outgassing(low weight-loss），Low trace metal levels等。
| Wafer制程類別 | 工藝制程 | 溫度 | 工況條件 |
| Plasma Processes | Etch | 25~200℃ | Cl2，BCl3,NF3,CHF3,HBr,C2F6,O2,CCl4,N2H2,SF6,SiCl4,,N2O,NF3 |
| DieletricEtch | 25~200℃ | C2F6,H2,O2,NF3,CHF3,CF4,CHF3,SF6 | |
| PECVD | 25~300℃ | TMS,TEP,DEMS,TEOS,SiH4,NH3, | |
| HDPCVD | SiF4,C3H6,O2,NF3 | ||
| Ashing/Stripping | 25~250℃ | O2,CF4,CHF3,NH3 | |
| Thermal Processes | SACVD | 25~300℃ | TEP, TEBO, TEOS, NF3, NH3，O3,O2,N2 |
Metal CVD & ALD LPCVD | 25~300℃ | Organic precursors, WF6, SiH6, TMA, DMAH,TiCl4,SiH4,HF,Cl2，SiH2Cl3,ClF3,NF3，H2O Vapour,O2,O3 | |
| Lamp annealer RTP | 150~300℃ | IR radiaion,O2,Steam | |
| Oxidation diffusion | 150~300℃ | N2, O2, H2O, HCl, Cl2,B2H6,PH3,BBr3,POCl3 | |
| UV cure | 150~300℃ | N2, O2,O3,Ar | |
| Thermal-ALD | 150~300℃ | TEOS, SiH4, NH3, SiF4, CF4,NF3 | |
| Wet Processes | Wafer Prep | 25~125℃ | SC1, SC2, SPM, HF, UPDI |
| CMP | 25~100℃ | KOH, NH3, UPDI | |
| Photolithography | 125~125℃ | TMAH, NaOH, H2SO4+Oxidant,Organic acids,NMP,Amines | |
| Stripping | 25~125℃ | NMP, MEA, HDMS, DMSO | |
| Cleaning/ Etching | 25~180℃ | HCl, HNO3, H3PO4, HF, UPDI ,SC1,SC2,O3 | |
| Copper Plating | 25~100℃ | CuSO4, H2SO4, H2O2 |
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